STMicroelectronics - STW6NB90

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STW6NB90 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STW6NB90
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3; Maximum Drain-Source On Resistance: 2 ohm;
Datasheet STW6NB90 Datasheet
In Stock1,786
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 700 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.3 A
JEDEC-95 Code: TO-247AC
Maximum Pulsed Drain Current (IDM): 25 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 2 ohm
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