STMicroelectronics - STW75N06

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STW75N06 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STW75N06
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Operating Temperature: 175 Cel; Maximum Turn On Time (ton): 1570 ns;
Datasheet STW75N06 Datasheet
In Stock168
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 1570 ns
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 300 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 200 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 970 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Power Dissipation Ambient: 200 W
Maximum Drain-Source On Resistance: .014 ohm
Avalanche Energy Rating (EAS): 900 mJ
Maximum Feedback Capacitance (Crss): 650 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 75 A
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