STX112-AP by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STX112-AP
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
Datasheet	STX112-AP Datasheet
In Stock	4,704

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	150 Cel
Other Names:	-497-12706-3 STX112AP -497-12706-1 STX112-AP-ND 497-12706-1 497-12706-3
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	500
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 0.0067

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,704	$0.589	$2,770.656

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