T1035H-6G by STMicroelectronics | Triggering Devices

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	T1035H-6G
Description	TRIAC; Package Style (Meter): SMALL OUTLINE; Surface Mount: YES; Terminal Position: SINGLE; Configuration: SINGLE; Case Connection: MAIN TERMINAL 2;
Datasheet	T1035H-6G Datasheet
In Stock	835

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Trigger Device Type:	TRIAC
Configuration:	SINGLE
Sub-Category:	TRIACs
Surface Mount:	YES
Terminal Finish:	MATTE TIN
Minimum Critical Rate of Rise of Off-state Voltage:	1000 V/us
Maximum Holding Current:	35 mA
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	MAIN TERMINAL 2
Repetitive Peak Off-state Voltage:	600 V
Other Names:	T1035H6G T1035H-6G-ND -497-12711-5 497-12711-5
Maximum RMS On-state Current:	10 A
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum DC Gate Trigger Voltage:	1 V
Maximum DC Gate Trigger Current:	35 mA
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
835	$1.150	$960.250

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.