TS2919MJB/B by STMicroelectronics | Miscellaneous Components

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	TS2919MJB/B
Description	Limited Part Number Data;
In Stock	3,447

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,447	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

FDV304P

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The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.

B340A-13-F

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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LM317T

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BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.

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STMicroelectronics - TS2919MJB/B

Pricing (USD)

Popular Products

2N2222A

New England Semiconductor

FDV304P

Onsemi

B340A-13-F

SPC TECHNOLOGY/ MULTICOMP

1N4148WT

Surge Components

BAV99

Continental Device India

LM555CM

Fairchild Semiconductor

NE555D

NXP Semiconductors

LM317T

Texas Instruments

BAT54SLT1G

Onsemi

LM317T/NOPB

National Semiconductor

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