STMicroelectronics - TSD4M251F

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TSD4M251F by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number TSD4M251F
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 500 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 110 A; Maximum Drain Current (Abs) (ID): 110 A;
Datasheet TSD4M251F Datasheet
In Stock3,240
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 500 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 110 A
Maximum Drain Current (Abs) (ID): 110 A
Sub-Category: FET General Purpose Power
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