STMicroelectronics - TSG25N100DF

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TSG25N100DF by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number TSG25N100DF
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; Maximum VCEsat: 3.5 V; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V;
Datasheet TSG25N100DF Datasheet
In Stock4,950
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 300 W
Maximum Collector-Emitter Voltage: 1000 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.5 V
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