VND3NV04 by STMicroelectronics | Interface ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	VND3NV04
Description	BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 2; Package Code: TO-252; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet	VND3NV04 Datasheet
In Stock	1,994

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	2.63 mm
Turn-on Time:	1.35 us
Nominal Output Peak Current Limit:	5 A
Surface Mount:	YES
No. of Functions:	1
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Output Current Flow Direction:	SINK
Length:	6.5 mm
JESD-30 Code:	R-PSSO-G2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Built-in Protections:	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Peak Reflow Temperature (C):	NOT SPECIFIED
Package Code:	TO-252
Interface IC Type:	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Width:	6.1 mm
Terminal Pitch:	2.28 mm
Turn-off Time:	10 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,994	-	-

Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.