Z8621AF1E by STMicroelectronics | Peripheral ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	Z8621AF1E
Description	MICROCONTROLLER; Terminal Form: THROUGH-HOLE; No. of Terminals: 40; Package Code: DIP; Package Shape: RECTANGULAR; Address Bus Width: 16;
Datasheet	Z8621AF1E Datasheet
In Stock	4,716

NAME	DESCRIPTION
Minimum Supply Voltage:	5 V
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Surface Mount:	NO
ADC Channels:	NO
No. of Terminals:	40
DMA Channels:	NO
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
No. of I/O Lines:	32
Address Bus Width:	16
Technology:	CMOS
JESD-30 Code:	R-CDIP-T40
Maximum Clock Frequency:	12 MHz
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Package Code:	DIP
Speed:	12 rpm
Peripheral IC Type:	MICROCONTROLLER
Maximum Supply Voltage:	5 V
External Data Bus Width:	8
Bit Size:	8
DAC Channels:	NO
Qualification:	Not Qualified
PWM Channels:	NO
ROM Programmability:	OTPROM

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,716	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

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MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.