GBPC35-10W by Taitron Components | Diodes

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Manufacturer	Taitron Components
Manufacturer's Part Number	GBPC35-10W
Description	BRIDGE RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: WIRE; No. of Terminals: 4; Surface Mount: NO; Package Shape: SQUARE;
Datasheet	GBPC35-10W Datasheet
In Stock	1,865

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
No. of Phases:	1
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	BRIDGE, 4 ELEMENTS
Diode Type:	BRIDGE RECTIFIER DIODE
Maximum Output Current:	35 A
Maximum Repetitive Peak Reverse Voltage:	1000 V
Surface Mount:	NO
Minimum Operating Temperature:	-65 Cel
Maximum Non Repetitive Peak Forward Current:	400 A
Diode Element Material:	SILICON
No. of Terminals:	4
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	S-PUFM-W4
Minimum Breakdown Voltage:	1000 V
No. of Elements:	4
Package Shape:	SQUARE
Terminal Form:	WIRE
Maximum Operating Temperature:	150 Cel
Reference Standard:	UL RECOGNIZED
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,865	-	-

STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;