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| Manufacturer | Taiwan Semiconductor |
|---|---|
| Manufacturer's Part Number | 1SS133MR0G |
| Description | RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND; |
| Datasheet | 1SS133MR0G Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | GLASS |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Config: | SINGLE |
| Diode Type: | RECTIFIER DIODE |
| Maximum Output Current: | .15 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | AXIAL |
| Package Style (Meter): | LONG FORM |
| JESD-30 Code: | O-LALF-W2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ISOLATED |
| Other Names: |
1SS133M R0GTR 1SS133MR0GDKR-ND 1SS133M R0GTR-ND 1SS133MR0GTR 1SS133M R0GCT-ND 1SS133M R0GCT 1SS133M R0GDKR 1SS133M R0GDKR-ND 1SS133MR0GCT 1SS133MR0GDKRINACTIVE 1SS133MR0GDKR |
| No. of Phases: | 1 |
| Maximum Repetitive Peak Reverse Voltage: | 90 V |
| JEDEC-95 Code: | DO-34 |
| JESD-609 Code: | e3 |
| Diode Element Material: | SILICON |
| Maximum Power Dissipation: | .3 W |
| Peak Reflow Temperature (C): | 260 |
| Maximum Reverse Recovery Time: | .004 us |








