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| Manufacturer | Taiwan Semiconductor |
|---|---|
| Manufacturer's Part Number | BZT52B3V3RHG |
| Description | ZENER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | BZT52B3V3RHG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Working Test Current: | 5 mA |
| Config: | SINGLE |
| Diode Type: | ZENER DIODE |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN OVER NICKEL |
| Maximum Reverse Current: | 4.5 uA |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Technology: | ZENER |
| JESD-30 Code: | R-PDSO-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Knee Impedance: | 564 ohm |
| Maximum Dynamic Impedance: | 95 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
BZT52B3V3 RHGTR-ND BZT52B3V3 RHGCT-ND BZT52B3V3RHGCT BZT52B3V3RHGDKR BZT52B3V3RHGTR BZT52B3V3 RHGCT BZT52B3V3 RHGDKR BZT52B3V3 RHGTR BZT52B3V3 RHGDKR-ND |
| Reverse Test Voltage: | 1 V |
| JESD-609 Code: | e3 |
| Maximum Voltage Tolerance: | 2 % |
| Diode Element Material: | SILICON |
| Nominal Reference Voltage: | 3.3 V |
| Maximum Power Dissipation: | .5 W |
| Peak Reflow Temperature (C): | 260 |









