Taiwan Semiconductor - BZT55C18L1G

BZT55C18L1G by Taiwan Semiconductor

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Manufacturer Taiwan Semiconductor
Manufacturer's Part Number BZT55C18L1G
Description ZENER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Datasheet BZT55C18L1G Datasheet
NAME DESCRIPTION
Package Body Material: GLASS
Maximum Time At Peak Reflow Temperature (s): 30
Working Test Current: 5 mA
Config: SINGLE
Diode Type: ZENER DIODE
Sub-Category: Voltage Reference Diodes
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
Maximum Reverse Current: .1 uA
No. of Terminals: 2
Terminal Position: END
Package Style (Meter): LONG FORM
Technology: ZENER
JESD-30 Code: O-LELF-R2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WRAP AROUND
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Knee Impedance: 170 ohm
Maximum Dynamic Impedance: 50 ohm
Moisture Sensitivity Level (MSL): 1
Reverse Test Voltage: 13 V
JEDEC-95 Code: DO-213AA
JESD-609 Code: e3
Minimum Operating Temperature: -65 Cel
Maximum Voltage Tolerance: 5 %
Diode Element Material: SILICON
Nominal Reference Voltage: 18 V
Maximum Power Dissipation: .5 W
Peak Reflow Temperature (C): 260
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