Taiwan Semiconductor - TSM126CXRFG

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TSM126CXRFG by Taiwan Semiconductor

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Manufacturer Taiwan Semiconductor
Manufacturer's Part Number TSM126CXRFG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
Datasheet TSM126CXRFG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .03 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: 800 ohm
Moisture Sensitivity Level (MSL): 3
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