Taiwan Semiconductor - TSM480P06CPROG

TSM480P06CPROG by Taiwan Semiconductor

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Manufacturer Taiwan Semiconductor
Manufacturer's Part Number TSM480P06CPROG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
Datasheet TSM480P06CPROG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 64 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .048 ohm
Avalanche Energy Rating (EAS): 51 mJ
Maximum Feedback Capacitance (Crss): 65 pF
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -50 Cel
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): 260
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