2-647123-6 by TE Connectivity | Connectors

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Manufacturer	TE Connectivity
Manufacturer's Part Number	2-647123-6
Description	RECTANGULAR POWER CONNECTOR; Option: GENERAL PURPOSE; Reliability: COMMERCIAL; Contact Gender: MALE; No. of Connectors: ONE; Body Length: 1.03 inch;
Datasheet	2-647123-6 Datasheet
In Stock	940

NAME	DESCRIPTION
Mating Contact Finish:	NOT SPECIFIED
Mains Connector Rating:	7A
IEC Conformity:	NO
Panel Mount:	NO
Sub-Category:	Headers and Edge Type Connectors
Empty Shell:	YES
MIL Conformity:	NO
No. of Rows Loaded:	1
Termination Type:	SOLDER
Maximum Operating Temperature (Cel):	105
Body Length:	1.03 inch
Contact Gender:	MALE
Connector Type:	RECTANGULAR POWER CONNECTOR
Contact Material:	NOT SPECIFIED
Mounting Option-2:	LATCHING
UL Flammability Code:	94V-0
Mounting Style:	STRAIGHT
Mixed Contacts:	NO
Polarization Key:	POLARIZED
No. of Ports:	1
Plating Thickness (inch):	350u
Contact Style:	SQ PIN-SKT
EMI Shielded:	NO
Filter Feature:	NO
Mounting Type:	BOARD
JESD-609 Code:	e3
Body Depth:	.525 inch
Minimum Operating Temperature:	-55 Cel
Total No. of Contacts:	6
Body Width:	.455 inch
Terminal Pitch (mm):	3.96
Terminal Length:	.115 inch
Termination Contact Finish:	TIN
Rated Current - Signal:	7 A
No. of Connectors:	ONE
Insulator Material:	POLYESTER
Additional Features:	RATED CURRENT(POWER):7A, POLARIZED, SHROUDED
Insulator Color:	BLACK
Reference Standard:	CSA, UL
Option:	GENERAL PURPOSE
Contact Pattern:	RECTANGULAR
Body or Shell Style:	PLUG
Reliability:	COMMERCIAL
DIN Conformance:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
940	$2.090	$1,964.600

MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;