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| Manufacturer | Telcom Semiconductor |
|---|---|
| Manufacturer's Part Number | 1N5306 |
| Description | CURRENT REGULATOR DIODE; Surface Mount: NO; Diode Element Material: SILICON; Maximum Repetitive Peak Reverse Voltage: 100 V; Nominal Regulation Current (Ireg): 2.2 mA; Minimum Dynamic Impedance: 370000 ohm; |
| Datasheet | 1N5306 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Diode Element Material: | SILICON |
| Minimum Dynamic Impedance: | 370000 ohm |
| Diode Type: | CURRENT REGULATOR DIODE |
| Nominal Regulation Current (Ireg): | 2.2 mA |
| Maximum Power Dissipation: | .6 W |
| Maximum Repetitive Peak Reverse Voltage: | 100 V |
| Sub-Category: | Current Regulator Diodes |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| Maximum Limiting Voltage: | 1.95 V |









