Temic Semiconductors - TEST2600

  1. Home
  2. Temic Semiconductors - TEST2600
TEST2600 by Temic Semiconductors

Image shown is a representation only.

Manufacturer Temic Semiconductors
Manufacturer's Part Number TEST2600
Description PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 70 V; No. of Functions: 1; Nominal Light Current: 2.5 mA;
Datasheet TEST2600 Datasheet
In Stock11,173
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: YES
Maximum Dark Current: 100 nA
Optoelectronic Type: PHOTO TRANSISTOR
Shape: ROUND
Configuration: SINGLE
Size: 1.5 mm
Nominal Light Current: 2.5 mA
Peak Wavelength (nm): 920
Additional Features: HIGH SENSITIVITY, SIDE VIEW
Minimum Collector-emitter Breakdown Voltage: 70 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11,173 - -

Popular Products

Category Top Products

BPX38-2 by Infineon Technologies

BPX38-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;
PH110 by Nec Electronics America

PH110

Nec Electronics America

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .4 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; JESD-609 Code: e0;
BP103BF4 by Infineon Technologies

BP103BF4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; Maximum On State Current: .05 A;
QSD124 by Fairchild Semiconductor

QSD124

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; JESD-609 Code: e3;
SFH303FA by Infineon Technologies

SFH303FA

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; No. of Functions: 1; Minimum Operating Temperature: -40 Cel;
QSB363ZR by Onsemi

QSB363ZR

Onsemi

QSB363ZR by Onsemi is a 1.9mm ROUND PHOTO TRANSISTOR with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and surface mounting feature.
QSD123 by Rochester Electronics

QSD123

Rochester Electronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;
PH5503A2NA1-Y-A by Renesas Electronics

PH5503A2NA1-Y-A

Renesas Electronics

Photo Transistors;
TIL415 by Texas Instruments

TIL415

Texas Instruments

TIL415 by Texas Instruments is a phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, dissipating max power of 0.05W. With fast response time of 0.000025s and max on state current of 0.0001A, it's ideal for light sensing applications.
TPS616-B by Toshiba

TPS616-B

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Shape: ROUND; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel;
SFH325FA2 by Infineon Technologies

SFH325FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;
TPS626(A) by Toshiba

TPS626(A)

Toshiba

PHOTO DARLINGTON; No. of Functions: 1; Size: 1.5 mm; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Infrared (IR) Range: YES;
SFH309P3 by Infineon Technologies

SFH309P3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .165 W;
BP103-4 by Infineon Technologies

BP103-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel;
SFH314FA-2 by Infineon Technologies

SFH314FA-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 200 nA; Maximum Response Time: .00001 s;
SFH310FA-2 by Infineon Technologies

SFH310FA-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000007 s; Minimum Operating Temperature: -55 Cel;
BPX43-4/5 by Osram Opto Semiconductors

BPX43-4/5

Osram Opto Semiconductors

Osram Opto Semiconductors' BPX43-4/5 is a 4.7mm single phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 125°C, with max power dissipation of 0.22W and response time of 0.000018s. Ideal for IR applications, it has a nominal light current of 15mA and max on state current of 0.05A.
QSD724 by Onsemi

QSD724

Onsemi

The Onsemi QSD724 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.00001s. Ideal for IR applications, it has a collector-emitter breakdown voltage of 30V and nominal light current of 3.5mA.
SFH320-2 by Infineon Technologies

SFH320-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;
SFH309 by Infineon Technologies

SFH309

Infineon Technologies

SFH309 by Infineon Technologies is a phototransistor with a peak wavelength of 860nm. It has a max operating temperature of 100°C and a min operating temperature of -55°C. This through-hole mount device is commonly used in applications requiring low dark current and a max on-state current of 0.015A.