Texas Instruments - 2G303

  1. Home
  2. Texas Instruments - 2G303
2G303 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number 2G303
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .3 A;
In Stock2,522
NAME DESCRIPTION
Nominal Transition Frequency (fT): 3 MHz
Maximum Collector Current (IC): .3 A
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
No. of Elements: 1
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,522 - -

Popular Products

Category Top Products

BC846 by Philips Semiconductors

BC846

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP147 by Philips Semiconductors

TIP147

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
TIP142 by Inchange Semiconductor

TIP142

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
BC847B by North American Philips Discrete Products Div

BC847B

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP29C by Asi Semiconductor

TIP29C

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BC857B by Plessey Semiconductors Discrete Components Div

BC857B

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3904 by Semiconductors

2N3904

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by Samsung

MMBT3906

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
TIP125 by Inchange Semiconductor

TIP125

Inchange Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP111 by Asi Semiconductor

TIP111

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BD139 by Iskra Semic Capacitors Industry

BD139

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP41C by Boca Semiconductor

TIP41C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD139-10 by Secos

BD139-10

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP112 by General Electric Solid State

TIP112

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BC547C by Semiconductors

BC547C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT5551 by Samsung

MMBT5551

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP122 by Toshiba

TIP122

Toshiba

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP117 by Boca Semiconductor

TIP117

Boca Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
BD140 by Telefunken Microelectronics

BD140

Telefunken Microelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N2905A by Infineon Technologies

2N2905A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;