Texas Instruments - 2N1319

  1. Home
  2. Texas Instruments - 2N1319
2N1319 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number 2N1319
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .4 A;
In Stock1,611
NAME DESCRIPTION
Nominal Transition Frequency (fT): 3 MHz
Maximum Collector Current (IC): .4 A
Maximum Power Dissipation (Abs): .12 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 71 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 15
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,611 - -

Popular Products

Category Top Products

2N2907A by Tesla Elektronicke Soucastky

2N2907A

Tesla Elektronicke Soucastky

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC547C-G by Weitron Technology

BC547C-G

Weitron Technology

BC547C-G by Weitron Tech is an NPN transistor with max power dissipation of 0.625W, min DC current gain of 420, and max operating temp of 150°C. Ideal for applications requiring a single configuration such as amplification circuits due to its high transition frequency of 150MHz.
IRF640 by General Electric Solid State

IRF640

General Electric Solid State

Other Transistors;
TIP125 by Harris Semiconductor

TIP125

Harris Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BC857B by Plessey Semiconductors Discrete Components Div

BC857B

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC807-40 by Kodenshi Auk

BC807-40

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
IRF640 by Semiconductor Technology

IRF640

Semiconductor Technology

Other Transistors;
TIP112 by Intersil

TIP112

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP32C by National Semiconductor

TIP32C

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
2N2219A by Shanghai Lunsure Electronic Technology

2N2219A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.
BC817-16 by Vishay Intertechnology

BC817-16

Vishay Intertechnology

BC817-16 by Vishay Intertechnology is an NPN transistor with a max power dissipation of 0.33W and a min DC current gain of 100. It is suitable for surface mount applications and can handle a max collector current of 0.5A.
FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.
TIP29C by Asi Semiconductor

TIP29C

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP31C by General Electric Solid State

TIP31C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
JANSR2N2222AUB by Semicoa

JANSR2N2222AUB

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC337-40 by Texas Instruments

BC337-40

Texas Instruments

BC337-40 by Texas Instruments is an NPN transistor with a single configuration. It has a max power dissipation of 0.625W, min DC current gain of 250, and max collector current of 0.8A. Ideal for applications requiring high current amplification in circuits operating up to 150°C.
BC807-25 by Vishay Intertechnology

BC807-25

Vishay Intertechnology

Vishay Intertechnology's BC807-25 is a PNP transistor with max power dissipation of 0.35W, min DC current gain of 160, and max collector current of 0.5A. Ideal for applications requiring single configuration transistors in surface mount technology, operating up to 150°C.
2010 by Asi Semiconductor

2010

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.5 A; No. of Elements: 1;
PMBT2222A by North American Philips Discrete Products Div

PMBT2222A

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;