Texas Instruments - 2N2997

  1. Home
  2. Texas Instruments - 2N2997
2N2997 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number 2N2997
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .075 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;
In Stock2,279
NAME DESCRIPTION
Maximum Collector Current (IC): .05 A
Maximum Power Dissipation (Abs): .075 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 100 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 500
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,279 - -

Popular Products

Category Top Products

2N2222AUB by Micropac Industries

2N2222AUB

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BD140 by Philips Semiconductors

BD140

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC857C by Vishay Intertechnology

BC857C

Vishay Intertechnology

Vishay Intertechnology's BC857C is a PNP transistor with max power dissipation of 0.31W, min DC current gain of 420, and max operating temp of 150°C. Ideal for applications requiring a single configuration in surface mount technology, such as low-power amplification circuits.
TIP110 by Harris Semiconductor

TIP110

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
2N3055 by Plessey Semiconductors Discrete Components Div

2N3055

Plessey Semiconductors Discrete Components Div

2N3055 by Plessey Semiconductors is an NPN transistor with a max power dissipation of 115W and a min DC current gain of 20. It can handle a max collector current of 15A and has a nominal transition frequency of 2.5MHz. This transistor is commonly used in various applications requiring high power amplification or switching capabilities.
MMBT5551 by Weitron Technology

MMBT5551

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N4401 by Shanghai Lunsure Electronic Technology

2N4401

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
MMBT5551 by Samsung

MMBT5551

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A; Terminal Finish: Tin/Lead (Sn/Pb);
MMBT4401 by Boca Semiconductor

MMBT4401

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
TIP47 by Semitronics

TIP47

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC857B by Itt Components

BC857B

Itt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-25 by North American Philips Discrete Products Div

BC817-25

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
BD139 by Telefunken Microelectronics

BD139

Telefunken Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP142 by Comset Semiconductors

TIP142

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
BD139-10 by National Semiconductor

BD139-10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
BC857B by Vishay Intertechnology

BC857B

Vishay Intertechnology

Vishay Intertechnology's BC857B is a PNP transistor with a min DC current gain of 200. It has a max power dissipation of 0.31W and can handle a max collector current of 0.1A. Ideal for applications requiring single configuration transistors in surface mount setups, operating up to 150°C.
TIP112 by Mospec Semiconductor

TIP112

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BC807-40 by Shanghai Lunsure Electronic Technology

BC807-40

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;