2N3251A by Texas Instruments | Transistors

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	2N3251A
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): .2 A;
Datasheet	2N3251A Datasheet
In Stock	4,724

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	300 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	70 ns
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	250 ns
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-18
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	30
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,724	$0.765	$3,613.860

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;

LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.

Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;