2N4416 by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	2N4416
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Datasheet	2N4416 Datasheet
In Stock	77

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
Minimum Power Gain (Gp):	10 dB
Maximum Feedback Capacitance (Crss):	.8 pF
JEDEC-95 Code:	TO-72
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
77	-	-

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;