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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | 2N5390 |
| Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified; |
| Datasheet | 2N5390 Datasheet |
| In Stock | 1,029 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | 2 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| JEDEC-95 Code: | TO-33 |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 1000 |
| No. of Terminals: | 4 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 1 W |
| Maximum Collector-Emitter Voltage: | 80 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | COLLECTOR |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









