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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | 2N5390 |
Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified; |
Datasheet | 2N5390 Datasheet |
In Stock | 1,029 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Maximum Collector Current (IC): | 2 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | DARLINGTON WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
JEDEC-95 Code: | TO-33 |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | NPN |
Surface Mount: | NO |
Minimum DC Current Gain (hFE): | 1000 |
No. of Terminals: | 4 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 1 W |
Maximum Collector-Emitter Voltage: | 80 V |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-MBCY-W4 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Maximum Operating Temperature: | 200 Cel |
Case Connection: | COLLECTOR |
Peak Reflow Temperature (C): | NOT SPECIFIED |