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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | 2N5549 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Field Effect Transistor Technology: JUNCTION; |
| Datasheet | 2N5549 Datasheet |
| In Stock | 1,531 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .36 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | GATE |
| Maximum Feedback Capacitance (Crss): | 2 pF |
| JEDEC-95 Code: | TO-18 |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









