Texas Instruments - 2N5875

  1. Home
  2. Texas Instruments - 2N5875
2N5875 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number 2N5875
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 8 A;
Datasheet 2N5875 Datasheet
In Stock268
NAME DESCRIPTION
Nominal Transition Frequency (fT): 4 MHz
Package Body Material: METAL
Maximum Collector Current (IC): 8 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Maximum Operating Temperature: 200 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-3
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 5
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
268 - -

Popular Products

Category Top Products

2N2907A by Central Semiconductor

2N2907A

Central Semiconductor

Power Bipolar Transistors; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Qualification: Not Qualified;
TIP112 by Nte Electronics

TIP112

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Form: THROUGH-HOLE;
TIP122FP by STMicroelectronics

TIP122FP

STMicroelectronics

TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.
JAN2N2219A by Vpt Components

JAN2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
JANTX2N3055 by Powertech

JANTX2N3055

Powertech

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Shape: ROUND; Qualification: Not Qualified;
JAN2N3055 by Solitron Devices

JAN2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2SC5200 by New Jersey Semiconductor Products

2SC5200

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; No. of Elements: 1;
BD138 by Central Semiconductor

BD138

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD679A by Baneasa S A

BD679A

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Case Connection: ISOLATED; Terminal Form: THROUGH-HOLE;
BCP56-16 by Weitron Technology

BCP56-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
BD679 by STMicroelectronics

BD679

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP3055 by Motorola

TIP3055

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5;
TIP120 by Inchange Semiconductor

TIP120

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
ZTX851 by Zetex Plc

ZTX851

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP50 by SPC TECHNOLOGY/ MULTICOMP

TIP50

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
2N3055 by Vpt Components

2N3055

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
D44H11 by Fairchild Semiconductor

D44H11

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP120G by Onsemi

TIP120G

Onsemi

TIP120G by Onsemi is a NPN power BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
TIP50 by Semitronics

TIP50

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP3055 by Central Semiconductor

TIP3055

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;