Texas Instruments - 3N207

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3N207 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number 3N207
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 25 V; Maximum Drain Current (Abs) (ID): .1 A;
Datasheet 3N207 Datasheet
In Stock3,043
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: CHOPPER
Maximum Drain Current (ID): .1 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 8
Maximum Power Dissipation (Abs): .3 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W8
No. of Elements: 2
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 400 ohm
Maximum Feedback Capacitance (Crss): 2.5 pF
JEDEC-95 Code: TO-76
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .1 A
Peak Reflow Temperature (C): NOT SPECIFIED
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