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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | 3N225A |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Terminal Form: WIRE; |
Datasheet | 3N225A Datasheet |
In Stock | 4,528 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | .05 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | .36 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-MBCY-W4 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 200 Cel |
Maximum Feedback Capacitance (Crss): | .03 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .05 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |