5962-0151201QPA by Texas Instruments | Interface ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	5962-0151201QPA
Description	BUFFER OR INVERTER BASED MOSFET DRIVER; Temperature Grade: MILITARY; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
In Stock	326

NAME	DESCRIPTION
Minimum Supply Voltage:	5 V
Package Body Material:	CERAMIC, GLASS-SEALED
Nominal Supply Voltage:	20 V
Sub-Category:	MOSFET Drivers
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Screening Level:	MIL-PRF-38535 Class Q
Technology:	BIPOLAR
JESD-30 Code:	R-GDIP-T8
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	125 Cel
Package Code:	DIP
Interface IC Type:	BUFFER OR INVERTER BASED MOSFET DRIVER
Turn-off Time:	.04 us
High Side Driver:	YES
Maximum Supply Voltage:	40 V
Turn-on Time:	.04 us
Nominal Output Peak Current Limit:	1.5 A
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
No. of Functions:	2
Qualification:	Qualified
Package Equivalence Code:	DIP8,.3
Terminal Pitch:	2.54 mm
Temperature Grade:	MILITARY
Power Supplies (V):	20

Pricing (USD)

Qty.	Unit Price	Ext. Price
326	-	-

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;