5962-0151301QXX by Texas Instruments | Interface ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	5962-0151301QXX
Description	LIQUID CRYSTAL DISPLAY DRIVER; Temperature Grade: MILITARY; Terminal Form: NO LEAD; No. of Terminals: 268; Package Code: DIE; Package Shape: RECTANGULAR;
Datasheet	5962-0151301QXX Datasheet
In Stock	199

NAME	DESCRIPTION
Minimum Supply Voltage:	3 V
Package Body Material:	UNSPECIFIED
Nominal Supply Voltage:	3.3 V
Display Mode:	DOT MATRIX
Data Input Mode:	SERIAL
Surface Mount:	YES
Terminal Finish:	GOLD
No. of Terminals:	268
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
Screening Level:	MIL-STD-883
Technology:	CMOS
JESD-30 Code:	R-XUUC-N268
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Minimum fmax:	.1 MHz
Maximum Operating Temperature:	125 Cel
Package Code:	DIE
Interface IC Type:	LIQUID CRYSTAL DISPLAY DRIVER
Maximum Supply Voltage:	3.6 V
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
No. of Functions:	1
Qualification:	Not Qualified
Multiplexed Display Capability:	NO
Temperature Grade:	MILITARY
No. of Segments:	256

Pricing (USD)

Qty.	Unit Price	Ext. Price
199	-	-

RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;

MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;