Texas Instruments - 5962-8777801XX

  1. Home
  2. Texas Instruments - 5962-8777801XX
5962-8777801XX by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number 5962-8777801XX
Description NPN AND PNP; Configuration: COMPLEX; Surface Mount: NO; Reference Standard: MIL; Package Shape: ROUND; Transistor Element Material: SILICON;
In Stock178
NAME DESCRIPTION
Package Body Material: METAL
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-39
Polarity or Channel Type: NPN AND PNP
Surface Mount: NO
No. of Terminals: 3
Qualification: Qualified
Maximum Collector-Emitter Voltage: 42 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 3
Package Shape: ROUND
Terminal Form: WIRE
Reference Standard: MIL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
178 - -

Popular Products

Category Top Products

TIP50 by STMicroelectronics

TIP50

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP117 by Taitron Components

TIP117

Taitron Components

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB; Transistor Application: AMPLIFIER;
MJE340 by Motorola

MJE340

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
TIP111 by New Jersey Semiconductor Products

TIP111

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;
TIP50 by Continental Device India

TIP50

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD13916S by Fairchild Semiconductor

BD13916S

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Transistor Application: SWITCHING;
ULN2804A by Vishay Intertechnology

ULN2804A

Vishay Intertechnology

Vishay Intertechnology's ULN2804A is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a max collector-emitter voltage of 50V and a max collector current of 0.5A, this NPN transistor in a rectangular package with through-hole terminals offers reliable performance.
TIP122 by Nte Electronics

TIP122

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Case Connection: COLLECTOR;
TIP42A by Microsemi

TIP42A

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
TIP31C by Taitron Components

TIP31C

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;
TIP112 by Taitron Components

TIP112

Taitron Components

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Transistor Application: AMPLIFIER;
TIP120 by Micro Commercial Components

TIP120

Micro Commercial Components

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP142 by Samsung

TIP142

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified;
MJE3055T by Onsemi

MJE3055T

Onsemi

MJE3055T by Onsemi is a NPN BJT transistor with max. power dissipation of 75W, ideal for switching applications. With a max. collector-emitter voltage of 60V and max. collector current of 10A, it operates b/w -55 to 150°C. Its package style is flange mount with through-hole terminals, making it suitable for various power circuit designs.
2N3055H by Onsemi

2N3055H

Onsemi

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.
2N3055 by Space Power Electronics

2N3055

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP125 by Power Innovations

TIP125

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
TIP3055 by Motorola

TIP3055

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5;
BDX53C by Onsemi

BDX53C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;
TIP36C by Comset Semiconductors

TIP36C

Comset Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;