5962-9084703MRX by Texas Instruments | Memory ICs

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	5962-9084703MRX
Description	FAST PAGE DRAM; Temperature Grade: MILITARY; No. of Terminals: 20; Package Code: DIP; Package Shape: RECTANGULAR; Access Mode: FAST PAGE;
In Stock	391

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Organization:	1MX4
Maximum Seated Height:	5.08 mm
Access Mode:	FAST PAGE
Minimum Supply Voltage (Vsup):	4.5 V
Surface Mount:	NO
No. of Terminals:	20
No. of Words:	1048576 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-CDIP-T20
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	DIP
Width:	7.62 mm
No. of Ports:	1
Memory Density:	4194304 bit
Memory IC Type:	FAST PAGE DRAM
Minimum Operating Temperature:	-55 Cel
Memory Width:	4
No. of Functions:	1
Qualification:	Not Qualified
Maximum Access Time:	80 ns
No. of Words Code:	1M
Nominal Supply Voltage / Vsup (V):	5
Additional Features:	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Terminal Pitch:	2.54 mm
Temperature Grade:	MILITARY
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
391	-	-

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;