BQ2954SNN by Texas Instruments | Other Function Semiconductors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	BQ2954SNN
Description	BATTERY CHARGE CONTROLLER; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Datasheet	BQ2954SNN Datasheet
In Stock	2,953

NAME	DESCRIPTION
Maximum Switching Frequency:	200 kHz
Package Body Material:	PLASTIC/EPOXY
Minimum Input Voltage:	4.5 V
Control Mode:	CURRENT/VOLTAGE-MODE
Maximum Input Voltage:	5.5 V
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
Switcher Config:	SINGLE
No. of Functions:	1
No. of Terminals:	16
Qualification:	Not Qualified
Terminal Position:	DUAL
Nominal Input Voltage:	5 V
Package Style (Meter):	SMALL OUTLINE
Other IC type:	BATTERY CHARGE CONTROLLER
JESD-30 Code:	R-PDSO-G16
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	SOP
Control Technique:	PULSE WIDTH MODULATION
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,953	-	-

Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.