CSD13302WT by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	CSD13302WT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Drain Current (ID): 1.6 A; Additional Features: ULTRA LOW RESISTANCE;
Datasheet	CSD13302WT Datasheet
In Stock	4,804

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.6 A
Maximum Pulsed Drain Current (IDM):	29 A
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.8 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	S-PBGA-B4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0285 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	196 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	12 V
Additional Features:	ULTRA LOW RESISTANCE
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,804	$0.390	$1,873.560

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