Texas Instruments - CSD13303W1015

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CSD13303W1015 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD13303W1015
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.65 W; Maximum Drain Current (Abs) (ID): 3.5 A; JESD-30 Code: R-XBGA-B6;
Datasheet CSD13303W1015 Datasheet
In Stock1,011
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 31 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
Maximum Power Dissipation (Abs): 1.65 W
Terminal Position: BOTTOM
JESD-30 Code: R-XBGA-B6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .023 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Maximum Drain Current (Abs) (ID): 3.5 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,011 $0.027 $27.297

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