
Image shown is a representation only.
Manufacturer | Texas Instruments |
---|---|
Manufacturer's Part Number | CSD22204W |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE; JESD-609 Code: e1; |
Datasheet | CSD22204W Datasheet |
In Stock | 4,045 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 5 A |
Maximum Pulsed Drain Current (IDM): | 80 A |
Surface Mount: | YES |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 9 |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | S-XBGA-B9 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .014 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 265 pF |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e1 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 8 V |
Peak Reflow Temperature (C): | 260 |