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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | CSD25201W15 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Package Style (Meter): GRID ARRAY; Maximum Drain Current (Abs) (ID): 4 A; |
| Datasheet | CSD25201W15 Datasheet |
| In Stock | 1,012 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 9 |
| Maximum Power Dissipation (Abs): | 1.5 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | S-PBGA-B9 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .07 ohm |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 4 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
