
Image shown is a representation only.
Manufacturer | Texas Instruments |
---|---|
Manufacturer's Part Number | CSD25202W15T |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e1; JESD-30 Code: S-PBGA-B9; |
Datasheet | CSD25202W15T Datasheet |
In Stock | 16,403 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 4 A |
Surface Mount: | YES |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 9 |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | S-PBGA-B9 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .052 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 27 pF |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e1 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 20 V |
Peak Reflow Temperature (C): | 260 |