CSD25211W1015 by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	CSD25211W1015
Description	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .044 ohm; Moisture Sensitivity Level (MSL): 1;
Datasheet	CSD25211W1015 Datasheet
In Stock	4,447

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3.2 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	BOTTOM
JESD-30 Code:	R-XBGA-B6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.044 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	CSD25211W1015-ND -296-36578-1-ND 296-36578-6-NDR -296-36578-1 296-36578-1 296-36578-2-NDR 296-36578-1-NDR 296-36578-2 -CSD25211W1015-NDR 296-36578-6
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Maximum Drain Current (Abs) (ID):	3.2 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,447	$0.336	$1,494.192

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