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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | CSD25213W10 |
Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; Maximum Drain Current (ID): 1.6 A; |
Datasheet | CSD25213W10 Datasheet |
In Stock | 537 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 1.6 A |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN SILVER COPPER |
JESD-609 Code: | e1 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 20 V |
Maximum Power Dissipation (Abs): | 1 W |
Terminal Position: | BOTTOM |
JESD-30 Code: | S-XBGA-B4 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 1.6 A |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .067 ohm |
Moisture Sensitivity Level (MSL): | 1 |