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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | CSD25481F4 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | CSD25481F4 Datasheet |
| In Stock | 735 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 2.5 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL GOLD |
| Maximum Power Dissipation (Abs): | .5 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | R-XBGA-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
296-40006-2 296-40006-1 296-40006-6 -296-40006-1-ND CSD25481F4-ND |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 20 V |
| Maximum Drain Current (Abs) (ID): | 2.5 A |
| Peak Reflow Temperature (C): | 260 |









