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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | CSD75207W15 |
| Description | P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Minimum DS Breakdown Voltage: -20 V; Maximum Drain Current (ID): 3.9 A; |
| Datasheet | CSD75207W15 Datasheet |
| In Stock | 45,203 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3.9 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | -20 V |
| Maximum Power Dissipation (Abs): | .7 W |
| Terminal Position: | BOTTOM |
| JESD-30 Code: | S-XBGA-B9 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 3.9 A |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .162 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
