Texas Instruments - CSD85301Q2

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CSD85301Q2 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD85301Q2
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 26 A; No. of Elements: 2; JESD-609 Code: e3;
Datasheet CSD85301Q2 Datasheet
In Stock3,938
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 26 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .039 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 3.8 mJ
Other Names: CSD85301Q2-ND
296-40010-1
-296-40010-1-ND
296-40010-2
-CSD85301Q2-NDR
296-40010-6
Maximum Feedback Capacitance (Crss): 62 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
3,938 $0.136 $535.568

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