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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | CSD87312Q3E-ASY |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 27 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; |
| Datasheet | CSD87312Q3E-ASY Datasheet |
| In Stock | 1,636 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 2.5 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 27 A |
| Maximum Drain Current (Abs) (ID): | 27 A |
| Sub-Category: | FET General Purpose Powers |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









