Texas Instruments - CSD87313DMST

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CSD87313DMST by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD87313DMST
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: S-PDSO-N6; No. of Terminals: 6;
Datasheet CSD87313DMST Datasheet
In Stock28,477
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 67 mJ
Maximum Feedback Capacitance (Crss): 200 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): 260
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