Texas Instruments - DRV8106SQRHBTQ1

LTC4444EMS8E#PBF by Analog Devices is a MOSFET Gate Driver with 2.5A output peak current limit, 0.05us turn-on time, and 0.045us turn-off time. It is used in applications requiring high side driver functionality, such as half bridge based systems for efficient power management.

UCC27524DR by Texas Instruments is a MOSFET gate driver with 2 channels, operating at supply voltages b/w 4.5V to 18V. It features a turn-on/off time of 0.023us and can handle a max output current of 5A. Ideal for automotive applications due to its small outline package style and dual terminal position.

1EDN7550UXTSA1 by Infineon Technologies is a MOSFET Gate Driver with 6 terminals, operating voltage range of 4.5V to 20V, and high side driver capability. It features a small outline package with dimensions of 1.5mm x 1.1mm x 0.4mm, suitable for applications requiring fast turn-on/off times such as power electronics and motor control systems.

BUFFER OR INVERTER BASED MOSFET DRIVER; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

TC4427EOAG by Microchip Technology is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 4.5V to 18V. It features a turn-on time of 0.04us and turn-off time of 0.06us, suitable for industrial applications requiring high side drivers in compact designs. This small outline package with dual terminals supports surface mount assembly for efficient integration.

IR2101STRPBF by Infineon is a MOSFET gate driver with a max supply voltage of 20V and high side driver feature. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 0.22us, making it ideal for half-bridge based applications. This small outline package (4.9mm x 3.9mm) with dual terminals is suitable for surface mount designs in various electronic systems.

ZXGD3009E6TA by Diodes Inc. is a MOSFET Gate Driver with AEC-Q101 screening, operating from -55 to 150°C. It features a peak output current of 1.58A, suitable for automotive applications requiring a compact, low-profile design and high-temperature tolerance up to 260°C during reflow soldering.

HALF BRIDGE BASED IGBT/MOSFET DRIVER; Terminal Form: GULL WING; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

LTC7000MPMSE#TRPBF by Analog Devices is a MOSFET gate driver with a max supply voltage of 150V and turn-on/off time of 0.07us. It is designed for high side driver applications in military-grade environments, featuring a small outline package style and operating temperature range from -55 to 150°C.

HALF BRIDGE BASED IGBT/MOSFET DRIVER; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: NICKEL GOLD PALLADIUM SILVER;

UCC27323DGNR by Texas Instruments is a MOSFET gate driver with 2 functions, operating at supply voltages of 4.5-15V. It features a small outline package style suitable for automotive applications, with inverted output polarity and peak output current of 4A. Ideal for driving MOSFETs in automotive systems requiring fast turn-on/off times.

BUFFER OR INVERTER BASED MOSFET DRIVER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

UCC5350MCDWV by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and output current of 10A. Ideal for automotive applications, it operates in temperatures ranging from -40 to 125°C. With a turn-on/off time of 0.1us, this driver features a small outline package style for compact designs.

IXDN609SIA by Littelfuse is a MOSFET Gate Driver with 35V max supply voltage, 9A peak current limit, and 0.055us turn-on time. Ideal for automotive applications due to its CMOS technology and dual terminal position for efficient power management in compact spaces.

IR2214SSPBF by Infineon Technologies is a MOSFET gate driver with a max supply voltage of 20V and built-in protections for transient, over current, and under voltage. It is designed for automotive applications, featuring a small outline package style with dual terminal position and Gull Wing terminal form. The device operates in temperatures ranging from -40°C to 125°C, making it suitable for harsh environments.

HALF BRIDGE BASED MOSFET DRIVER; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

AND GATE BASED MOSFET DRIVER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 14; Package Code: DIP; Package Shape: RECTANGULAR;

BUFFER OR INVERTER BASED MOSFET DRIVER; Temperature Grade: MILITARY; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

MIC5014YM by Microchip Technology is a MOSFET Gate Driver with 8 terminals, operating at -40 to 85°C. It has a supply voltage range of 2.75V to 30V and features high side driver functionality. Ideal for industrial applications requiring true output polarity control and standard input characteristics.

FULL BRIDGE BASED MOSFET DRIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR;