Texas Instruments - LM195HMD8

  1. Home
  2. Texas Instruments - LM195HMD8
LM195HMD8 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number LM195HMD8
Description NPN; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: UNSPECIFIED; Qualification: Not Qualified; Package Shape: UNSPECIFIED;
Datasheet LM195HMD8 Datasheet
In Stock936
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 42 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: X-XUUC-N
No. of Elements: 3
Package Shape: UNSPECIFIED
Terminal Form: NO LEAD
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
936 - -

Popular Products

Category Top Products

MJD44H11G by Onsemi

MJD44H11G

Onsemi

MJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
JANTX2N3055 by Api Technologies

JANTX2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
MJE340 by Continental Device India

MJE340

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
BCP56-16 by Micro Commercial Components

BCP56-16

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
TIP3055G by Onsemi

TIP3055G

Onsemi

TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.
TIP112 by Samsung

TIP112

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
SBCP56-16T1G by Onsemi

SBCP56-16T1G

Onsemi

SBCP56-16T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. With a max power dissipation of 1.5W and an hFE of at least 100, it operates up to 150°C making it suitable for various electronic designs.
TIP127 by Texas Instruments

TIP127

Texas Instruments

TIP127 by Texas Instruments is a PNP BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for high-power applications due to its Darlington configuration with built-in resistor. Commonly used in power supplies and motor control circuits.
MJD117T4 by Onsemi

MJD117T4

Onsemi

MJD117T4 by Onsemi is a PNP BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 50W, hFE of 200, and operates up to 150°C. Ideal for switching applications due to its high collector current (2A) and voltage (100V), in a small outline package.
TIP112 by Power Innovations

TIP112

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
TIP32C by Central Semiconductor

TIP32C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD243C by STMicroelectronics

BD243C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Terminal Finish: Matte Tin (Sn);
TIP32C by Semiconductors

TIP32C

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP42C by Nte Electronics

TIP42C

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
JANTX2N3055 by Microsemi

JANTX2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: BOTTOM; Terminal Form: PIN/PEG;
TIP41C by Forward International Electronics

TIP41C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP127 by Inchange Semiconductor

TIP127

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
MJE350 by Central Semiconductor

MJE350

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
TIP3055 by Continental Device India

TIP3055

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;
TIP47 by Tt Electronics Plc

TIP47

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;