Texas Instruments - LM195KMW8

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Moisture Sensitivity Level (MSL): 1; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Package Body Material: METAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;

TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 100 V;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSFM-T3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR; No. of Elements: 1;

ZTX951 by Diodes Inc. is a PNP BJT transistor with max. 60V VCE, 4A IC, and 120MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 10, it operates up to 200°C making it suitable for various industrial uses like power supplies and motor control systems.

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;