Texas Instruments - LM3046MX

  1. Home
  2. Texas Instruments - LM3046MX
LM3046MX by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number LM3046MX
Description NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): .05 A;
Datasheet LM3046MX Datasheet
In Stock1,383
NAME DESCRIPTION
Nominal Transition Frequency (fT): 550 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Maximum Time At Peak Reflow Temperature (s): 20
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 14
Maximum Power Dissipation (Abs): .75 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G14
No. of Elements: 5
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 85 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 40
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Additional Features: LOW NOISE
Peak Reflow Temperature (C): 235
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,383 - -

Popular Products

Category Top Products

MPSH11ZL1 by Onsemi

MPSH11ZL1

Onsemi

MPSH11ZL1 by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and a transition frequency of 650MHz. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.
2SC5347AE-TD-E by Onsemi

2SC5347AE-TD-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1;
MCH6001-TL-E by Sanyo Semiconductor

MCH6001-TL-E

Sanyo Semiconductor

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;
MMBTH24LT3 by Onsemi

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.
BFR93A by Vishay Semiconductors

BFR93A

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MCH4015-TL-H by Onsemi

MCH4015-TL-H

Onsemi

MCH4015-TL-H by Onsemi is a NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 10GHz and can handle a collector-emitter voltage of 12V. Ideal for X band applications, this transistor offers a max power dissipation of 0.45W in a small outline package.
MMBTH10-4LT1G by Onsemi

MMBTH10-4LT1G

Onsemi

MMBTH10-4LT1G by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 800MHz. Ideal for ultra-high frequency applications, it has a small outline package, matte tin finish, and operates up to 150°C.
BFP540ESDH6327XTSA1 by Infineon Technologies

BFP540ESDH6327XTSA1

Infineon Technologies

BFP540ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for S Band applications. With a max collector-emitter voltage of 4.5V and a nominal transition frequency of 30,000 MHz, it offers high performance in a small outline package.
2N5109 by Texas Instruments

2N5109

Texas Instruments

2N5109 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 0.4A, ideal for amplifier applications in the very high frequency band up to 1200MHz. Its package style is cylindrical with a metal body material and wire terminals, featuring a single configuration design.
JANTX2N2907AUB by Vpt Components

JANTX2N2907AUB

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3;
2N2222 by Space Power Electronics

2N2222

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
3003 by Advanced Power Technology

3003

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL; Terminal Form: FLAT;
2N2368 by STMicroelectronics

2N2368

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;
MMBT5179 by National Semiconductor

MMBT5179

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
HFA3127BZ by Renesas Electronics

HFA3127BZ

Renesas Electronics

Renesas Electronics' HFA3127BZ is an NPN RF BJT with 5 elements, ideal for amplifier applications. It operates in the ultra-high frequency band up to 8V and has a transition frequency of 8000MHz. This transistor comes in a small outline package with gull wing terminals for surface mount assembly.
BFR93A by Philips Components

BFR93A

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;
LA733Q by Onsemi

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
BFU550XRVL by NXP Semiconductors

BFU550XRVL

NXP Semiconductors

The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.
BFR93AR by Vishay Telefunken

BFR93AR

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
2N3866 by Semitronics

2N3866

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;