LMH6642QMF/NOPB by Texas Instruments | Amplifiers

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	LMH6642QMF/NOPB
Description	OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 5; Package Code: LSSOP; Package Shape: RECTANGULAR;
Datasheet	LMH6642QMF/NOPB Datasheet
In Stock	19,321

NAME	DESCRIPTION
Package Body Material:	Plastic/Epoxy
Low-Bias:	No
Maximum Seated Height:	0.057 in (1.45 mm)
Nominal Bandwidth (3dB):	46 MHz
Frequency Compensation:	Yes
Maximum Supply Voltage Limit:	13.5 V
Maximum Bias Current (IIB) @25C:	2.6 uA
Sub-Category:	Operational Amplifiers
Maximum Supply Current:	4 mA
Surface Mount:	Yes
Terminal Finish:	Matte Tin
No. of Terminals:	5
Minimum Slew Rate:	90 V/us
Maximum Input Offset Voltage:	7000 uV
Nominal Unity Gain Bandwidth:	130 MHz
Terminal Position:	Dual
Package Style (Meter):	Small Outline, Low Profile, Shrink Pitch
Screening Level:	AEC-Q100
Technology:	BIPOLAR
JESD-30 Code:	R-PDSO-G5
Low-Offset:	No
Minimum Voltage Gain:	5011.872
Package Shape:	Rectangular
Terminal Form:	Gull Wing
Maximum Operating Temperature:	85 °C (185 °F)
Package Code:	LSSOP
Amplifier Type:	Operational Amplifier
Nominal Slow Rate:	135 V/us
Width:	0.063 in (1.6 mm)
Moisture Sensitivity Level (MSL):	1
Architecture:	Voltage Feedback
Nominal Common Mode Reject Ratio:	95 dB
Packing Method:	Tape And Reel
Programmable Power:	No
Micropower:	No
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 °C (-40 °F)
Maximum Average Bias Current (IIB):	-3.25 uA
No. of Functions:	1
Minimum Common Mode Reject Ratio:	72 dB
Length:	0.114 in (2.9 mm)
Nominal Supply Voltage / Vsup (V):	3 V
Peak Reflow Temperature (C):	260 °C (500 °F)
Terminal Pitch:	0.037 in (0.95 mm)
Maximum Input Offset Current (IIO):	800 nA
Power:	No
Temperature Grade:	Industrial
Wideband:	Yes

Pricing (USD)

Qty.	Unit Price	Ext. Price
19,321	-	-

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;